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| Datasheet File OCR Text: |
| S8665-0909 features l four-stage te-cooled l number of active pixels: 512 (h) 512 (v) l pixel size: 24 24 m l 100 % fill factor l wide dynamic range l low dark current l low readout noise l mpp operation applications l astronomy l scientific measuring instrument l uv imaging l for low-light-level detection requiring image sensor ccd area image sensor four-stage thermoelectric cooled, back-thinned fft-ccd S8665-0909 is an fft-ccd area image sensor featuring low noise and low dark current (mpp mode operation). the output charge can be integrated for long periods of time even at low light levels, allowing a wide dynamic range. S8665-0909 uses a four-stage thermoelectric cooler that cools the ccd down to -50 ?c when operated at room temperatures, achiev ing even lower noise and dark current. 1 ! " # $% % &% &% &%% &%% ' ( ! ! & ) ! " # $%*+,- % *., &%*+,- &%*., ' / %0*+,-%0*.,1 &%%*+,-&%%*., . 23 %3 + / 23 %3 4 4 54!" 6 '2 % 2 7 #6 8#3 ccd area image sensor S8665-0909 2 ' 5 5 9 4 :$ ; :< ; 4( . :% . 8( . :& . =. . :& . =+ . :& . =>. . ?. & :& . =>+ . ?. & :& . > . & :& . 4> . & :& . 8> . & :& . > . & :& . . 2 . ?. & :& . + / 2 . ?. & :& . ! ' 5 5 9 4 # . & % %% . 8# . && &% &% . 4 . &$ . . . * , . . . *3 / , . . . * , . ?. . *3 / , . ?. . + 3 . ?. 0 . 3 2 @6 . ?. < . + 3 . ?. 0 + / 3 2 @6 . ?. < . + 3 . 0 @6 . < . + 3 . 0 8 @6 . < . + 3 . 0 @6 . < . "# ' 5 5 9 a & 5+/ . 3 ? ?0 ! + / 3 ? &% ! < ! 8 < ! & ! 3 b " ( b . &% & & . 4 # b c $ 2 '6 b b ' & 7 b&d 3 ?#3 3 6 b%d3 # # 3 # * ?. e% .?@# e%%2 , b$d'6 3 3 ccd area image sensor S8665-0909 3 dimensional outline (unit: mm) spectral response (without window) * 13 quantum efficiency (%) wavelength (nm) (typ. ta=25 c) 0 200 400 600 800 1000 1200 10 20 30 40 50 60 70 80 90 100 back-thinned front-illuminated front-illuminated (uv coat) 1.0 2 3 12 13 14 27 26 17 16 15 28 12.288 35.0 47.0 0.25 50.8 36.0 44.0 50.0 20.0 12.288 18.5 0.5 6.5 0.5 4.0 pin no. 1 1st pin index mark sapphire window 7.0 5.0 pinched off tube 2.54 0.46 27.94 kmpda0142eb kmpdb0058ea " # ! #$ ' 82 5 5 9 . !6- . . & $ ! 6 + / !6 b $ 2 ( # b & %% 1.f :% ; 0? &%? ; % (2 *5''#, $ ; ( b $ f f 8# b &% @ < ? ( (8 b $ % && '3 '89 b g& ) ' # b & # b $ h 3 # b b0d@ 3 / 6 b d. e% .? # e%%2 b d(2 # <; b f8# b d5#3 3 6 '3 *'89,i)je 2, *2 ! # -& b& d73 k$) 6 ; e&?h 2k )# #l b&&d % # b&%d & # *13: spectral response with sapphire window is decreased by the transmittance ccd area image sensor S8665-0909 4 device structure 6 7 5 3 23 24 8 9 10 22 21 18 19 11 12 13 512 signal out 4 blank 4 blank thinning thinning 1 2 3 4 2 3 4 5 v h 8 bevel 4 bevel 512 signal out 25 20 v=512 h=512 5 4 bevel 4 bevel dark current vs. temperature kmpdc0075eb -50 -40 -30 -20 0 -10 10 20 30 temperature ( c) 0.1 1 10 100 1000 10000 dark current (e - /pixel/s) (typ.) kmpdb0037eb ccd area image sensor S8665-0909 5 %& ' ( 82 & ' " % $ *>(, 0 =. * , 3#8( =>%. * %, 3# . <=>&. * &, 3# . 8> 8 8( 8# & 4 4 && 4( 4 # &% 4> 4 &$ > '%+ &0 ': " : & +& *3 #, & & * #, &< % * #, & '%+ (3 / 2 % & '&+ (3 / 2 & % =>%+ *3 / %, 3# . %& =>&+ *3 / &, 3# . %% =+ *3 / , 3#8( %$ '%. ( 2 % %0 '&. ( 2 & % > '%.b % %< % +% *3 #, b&0d> 6 #3 / = ## ?3 '%.3 # #3> ccd area image sensor S8665-0909 6 integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view 4..519 520 512 + 8 (bevel) tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 d5..d12, s1..s512, d13..d17 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 kmpdc0119ea timing chart ' 82 5 5 9 ' 6 #3 6 1 '&.?'%.?> 8 # ? b % ' 6 #3 63 8 # 3?3 & '&+?'%+ ( b ) ' 6 #3 6 8 # ? & > ( ) ' 6 #3 6 & 8> 8 # ? >m'&+ 4 $ 1 b& d 3 # # ) # area scanning 1 (low dark current mode) ccd area image sensor S8665-0909 7 kmpdc0120ea ' 82 5 5 9 ' 6 #3 6 1 '&.?'%.?> 8 # ? b % ' 6 #3 63 8 # 3?3 & '&+?'%+ ( b ) ' 6 #3 6 8 # ? & > ( ) ' 6 #3 6 & 8> 8 # ? > '&+ 4 $ 1 b& d 3 # # ) # integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view 4..519 520 512 + 8 (bevel) tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 d5..d12, s1..s512, d13..d17 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 area scanning 2 (large full well mode) ccd area image sensor S8665-0909 8 ' "' ' # 5 5 9 = 8 e%<; & 5 b = 3b e%<; b e 00 5 . 3b e%<; e =e= <0. 5 3 b n b e3b e%<; =e= $ 7 5 3 # ; ( e% ; $ ; b& # #3 3 # 33 #33 *' , # ? 3 3 # 3 )3 b&d3 #3 b& d e3 b% d3 3 3 33# 3' 63 3 #3 b%&d #3 kmpdb0222ea 0 2 4 6 voltage (v) ccd temperature ( c) 8 10 -80 3.0 2.0 current (a) 1.0 0 -60 -40 -20 0 20 (typ. ta=25 c) v - i ccd temperature - i ' ' # 5 5 9 8 # 8 e ; &? # $< f 8 3 # 83 e ; &? 3 # $ f ccd area image sensor S8665-0909 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 3 hamamatsu photonics k.k. cat. no. kmpd1059e03 feb. 2003 dn 9 kmpdb0108ea 0 -100 -80 -60 -40 -20 0 20 40 resistance ( ) 1400 1200 1000 800 600 400 200 temperature ( c) (typ. ta=25 c) precaution for use (electrostatic countermeasures) handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs. element cooling/heating temperature incline rate element cooling/heating temperature incline rate should be set at less than 5 k/min. |
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